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| SPI08N80C3 CoolMOSTM Power Transistor Features * New revolutionary high voltage technology * Extreme dv/dt rated * High peak current capability * Qualified according to JEDEC1) for target applications * Pb-free lead plating; RoHS compliant * Ultra low gate charge * Ultra low effective capacitances Product Summary V DS R DS(on)max @ Tj = 25C Q g,typ 800 0.65 45 V nC PG-TO262-3 CoolMOSTM 800V designed for: * Industrial application with high DC bulk voltage * Switching Application ( i.e. active clamp forward ) Type SPI08N80C3 Package PG-TO262-3 Marking 08N80C3 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...640 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T j, T stg T C=25 C T C=25 C I D=1.6 A, V DD=50 V I D=8 A, V DD=50 V Value 8 5.1 24 340 0.2 8 50 20 30 104 -55 ... 150 W C A V/ns V mJ Unit A Rev. 2.9 page 1 2008-10-15 SPI08N80C3 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 C 24 4 V/ns Value 8 Unit A Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA leaded 1.2 62 K/W Soldering temperature, T sold wave soldering only allowed at leads 1.6 mm (0.063 in.) from case for 10s - - 260 C Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=250 A V (BR)DS V GS(th) I DSS V GS=0 V, I D=8 A V DS=V GS, I D=0.47 mA V DS=800 V, V GS=0 V, T j=25 C V DS=800 V, V GS=0 V, T j=150 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=5.1 A, T j=25 C V GS=10 V, I D=5.1 A, T j=150 C Gate resistance RG f =1 MHz, open drain 800 2.1 870 3 3.9 20 A V - 100 0.56 100 0.65 nA - 1.5 1.2 Rev. 2.9 page 2 2008-10-15 SPI08N80C3 Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance C iss C oss V GS=0 V, V DS=100 V, f =1 MHz V GS=0 V, V DS=0 V to 480 V V DD=400 V, V GS=0/10 V, I D=8 A, R G=10 ? , T j=25 C 99 25 15 72 10 ns 1100 46 36 pF Values typ. max. Unit Effective output capacitance, energy C o(er) related5) Effective output capacitance, time related6) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current 1) C o(tr) t d(on) tr t d(off) tf Q gs Q gd Qg V plateau V DD=640 V, I D=8 A, V GS=0 to 10 V - 6 22 45 5.5 60 - nC V V SD t rr Q rr I rrm V GS=0 V, I F=I S=8 A, T j=25 C - 1 550 7 24 1.2 - V ns C A V R=400 V, I F=I S=8 A, di F/dt =100 A/s - J-STD20 and JESD22 Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. ISD=ID, di/dt=400A/s, VDClink = 400V, Vpeak 3) 4) 5) 6) Rev. 2.9 page 3 2008-10-15 SPI08N80C3 1 Power dissipation P tot=f(T C) 2 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 120 102 limited by on-state resistance 100 1 s 80 101 10 s P tot [W] 60 I D [A] 100 s 1 ms DC 40 100 10 ms 20 0 0 25 50 75 100 125 150 10-1 1 10 100 1000 T C [C] V DS [V] 3 Max. transient thermal impedance ZthJC=f(tP) parameter: D=t p/T 101 4 Typ. output characteristics I D=f(V DS); T j=25 C; t p=10 s parameter: V GS 30 20 V 100 20 10 V 0.5 Z thJC [K/W] 0.2 0.1 0.05 I D [A] 6.5 V 10-1 0.02 10 6V 0.01 single pulse 5.5 V 5V 10-2 10-5 10-4 10-3 10-2 10-1 0 0 5 10 15 20 25 t p [s] V DS [V] Rev. 2.9 page 4 2008-10-15 SPI08N80C3 5 Typ. output characteristics I D=f(V DS); T j=150 C; t p=10 s parameter: V GS 12 20 V 10 V 6 Typ. drain-source on-state resistance R DS(on)=f(I D); T j=150 C parameter: V GS 3.2 6V 2.8 9 5.5 V 6 5V R DS(on) [] 2.4 I D [A] 2 6V 4.5 V 5V 5.5 V 6.5 V 3 4.5 V 10 V 1.6 20 V 0 0 5 10 15 20 25 1.2 0 3 6 9 12 15 V DS [V] I D [A] 7 Drain-source on-state resistance R DS(on)=f(T j); I D=5.1 A; V GS=10 V 8 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max; t p=10 s parameter: T j 1.8 1.6 30 25 C 25 1.4 1.2 20 R DS(on) [] I D [A] 1 0.8 0.6 0.4 98 % typ 15 150 C 10 5 0.2 0 -60 -20 20 60 100 140 180 0 0 2 4 6 8 10 T j [C] V GS [V] Rev. 2.9 page 5 2008-10-15 SPI08N80C3 9 Typ. gate charge V GS=f(Q gate); I D=8 A pulsed parameter: V DD 10 10 Forward characteristics of reverse diode I F=f(V SD); t p=10 s parameter: T j 102 8 160 V 25 C 640 V 150C (98%) 10 6 1 150 C V GS [V] I F [A] 25C (98C) 4 100 2 0 0 10 20 30 40 50 10-1 0 0.5 1 1.5 2 Q gate [nC] V SD [V] 11 Avalanche energy E AS=f(T j); I D=1.6 A; V DD=50 V 12 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=0.25 mA 960 350 920 300 880 250 V BR(DSS) [V] 25 50 75 100 125 150 E AS [mJ] 200 840 150 800 100 760 50 720 0 680 -60 -20 20 60 100 140 180 T j [C] T j [C] Rev. 2.9 page 6 2008-10-15 SPI08N80C3 13 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 14 Typ. Coss stored energy E oss= f(V DS) 104 9 8 Ciss 103 7 6 E oss [J] 200 300 400 500 C [pF] 5 4 3 102 Coss 101 2 Crss 1 0 100 0 100 0 100 200 300 400 500 600 700 800 V DS [V] V DS [V] Rev. 2.9 page 7 2008-10-15 SPI08N80C3 Definition of diode switching characteristics Rev. 2.9 page 8 2008-10-15 SPI08N80C3 PG-TO262-3: Outline Dimensions in mm/inches Rev. 2.9 page 9 2008-10-15 SPI08N80C3 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.9 page 10 2008-10-15 |
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